Jan Voves
doc. RNDr., CSc.
Tel: +420-22435 2861
E-mail: voves(at)fel.cvut.cz
Education
1996 Docent degree, thesis “Simulation of Transport Effects in Modern Semiconductor Devices”
1992 CSc. degree (equivalent to Ph.D.) Thesis dealing with the the simulation of electronic devices.
1984 RNDr. degree in electonics and optics Charles University, Prague, Faculty Mathematics and Physics
1979-84 Study at the Charles University, Prague, Faculty Mathematics and Physics
Languages: Czech, English, passively: Slovak, German
Teaching
BVB13NNT – Nanotechnology
B2M34NANA – Nanoelectronics and Nanotechnology
B2M34SST – Solid State Physics
XP34ADM – Principles and Applications of Device Models
XP34ASD – Physics of Advanced Semiconductor Devices and Materials
Research Activities
Member of Electron Device Group at the Department
Characterization and Simulation of Quantum Electron Devices
Professional Experience
1996-now Asociate Proffessor at the Department of Microelectronics of FEE,CTU in Prague
1996 (1 month) visiting researcher at the Leeds Metropolitan University, GB
1993 (3 months) visiting researcher at the University of Hull, GB
1990/91 (5 months) visiting researcher at the KIHWV Oostende, Belgium
1987-96 Assistant Proffessor at the Department of Microelectronics of FEE,CTU in Prague
1984-87 Junior Researcher at the Department of Microelectronics of FEE,CTU in Prague
Professional Activities
Member of the Scientific Council of the IPE AS CR (2003-2007 )
Member of the Branche council of doctoral programme Physics, Charles University, FMP (2005-2019).
Member of the Branche council of doctoral programme Electronics, FEE,CTU in Prague (2002-now)
Member of the Branche council of doctoral programme Computational Physics, PřF UJEP Usti n.L., (2017-2020).
Member of IEEE, Chairman of MTT/EDS/AP/EMC Chapter cs. section of IEEE (2014-16)
Member of Physical Research Section of The Union of Czech Mathematicians and Physicists
Projects
2019-2023 Coordinator of the new technological laboratory Nanolab construction at the Department of Microelectronics of FEE,CTU in Prague supported by the EU projects.
2011-2014 Responsible of GACR project „Growth and processing of graphene layers on silicon carbide“
2012 Responsible of University Development project „Inovation of nanoelectronics a nanolithography laboratory“
2006-2010 Responsible for Grant Agency of the Czech Academy of Sciences project „Structures for spintronics and quantum effects in nanoelectronics prepared by electron lithography“
2006-2008 Responsible for GACR project „Spintronic applications of ferromagnetic nanostructures”
Industrial Cooperation
Development of new power semiconductor technologies – ABB CR, ON Semiconductor, Toyota
Selected Recent Publications
ESMAEILI, C., et al. Preparation and characterisation of NH3 gas sensor based on PANI/Fe-doped CeO2 nanocomposite. Heliyon. 2024, 10(15), 1-12. ISSN 2405-8440. DOI 10.1016/j.heliyon.2024.e34801. Available from: https://www.sciencedirect.com/science/article/pii/S2405844024108328
ŠMEJCKÝ, J., et al. Erbium-bismuth-doped germanium silicate active optic glass for broad-band optical amplification. Optical Materials. 2023, 137 ISSN 0925-3467. DOI 10.1016/j.optmat.2023.113621.
ŠUSTKOVÁ, H. and J. VOVES. Effect of HCl and H2SO4 Dilutant on Emeraldine Gas Sensor for Ammonia—Numerical Model. IEEE Sensors Letters. 2022, 2022(10), ISSN 2475-1472. DOI 10.1109/LSENS.2022.3210400.
ŠUSTKOVÁ, H. and J. VOVES. Modeling a multiple-chain emeraldine gas sensor for NH3 and NO2 detection. Beilstein Journal of Nanotechnology. 2022, 13 721-729. ISSN 2190-4286. DOI 10.3762/bjnano.13.64. Available from: https://www.beilstein-journals.org/bjnano/articles/13/64
ŠMARHÁK, J. and J. VOVES. Electronic transport properties of compressed and stretched helicene-graphene nanostructures, a theoretical study. Physica E. 2022, 141 ISSN 1386-9477. DOI 10.1016/j.physe.2021.115111.
KROUTIL, J., et al. A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification. Beilstein Journal of Nanotechnology. 2022, 13 411-423. ISSN 2190-4286. DOI 10.3762/bjnano.13.34. Available from: https://www.beilstein-journals.org/bjnano/articles/13/34
HAZDRA, P., et al. Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers. Diamond and Related Materials. 2022, 121 ISSN 0925-9635. DOI 10.1016/j.diamond.2021.108797.
MORTET, V., et al. Properties of boron-doped (113) oriented homoepitaxial diamond layers. Diamond and Related Materials. 2021, 111 ISSN 0925-9635. DOI 10.1016/j.diamond.2020.108223.
BARRI, D., et al. MOSFETs’ Electrical Performance in the 160-nm BCD Technology Process With the Diamond Layout Shape. IEEE Transactions on Electron Devices. 2020, 67(8), 3270-3277. ISSN 0018-9383. DOI 10.1109/TED.2020.3000744.
LAMBERT, N., et al. Modelling current transport in boron-doped diamond at high electric fields including self-heating effect. Diamond and Related Materials. 2020, 2020 ISSN 0925-9635. DOI 10.1016/j.diamond.2020.108003.
LAPOSA, A., et al. Inkjet Seeded CVD-Grown Hydrogenated Diamond Gas Sensor Under UV-LED Illumination. IEEE Sensors Journal. 2020, 20(3), 1158-1165. ISSN 1530-437X. DOI 10.1109/JSEN.2019.2946947.
BARRI, D., et al. Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping. IEEE Transactions on Electron Devices. 2019, 66(9), 3718-3725. ISSN 0018-9383. DOI 10.1109/TED.2019.2931090.
ŠUSTKOVÁ, H., A. POŠTA, and J. VOVES. Polyaniline emeraldine salt as an ammonia gas sensor – Comparison of quantum-based simulation with experiment. Physica E. 2019, 114 ISSN 1386-9477. DOI 10.1016/j.physe.2019.113621.
NÁHLÍK, J., et al. A High Sensitivity UV Photodetector With Inkjet Printed ZnO/Nanodiamond Active Layers. IEEE Sensors Journal. 2019, 19(14), 5587-5593. ISSN 1530-437X. DOI 10.1109/JSEN.2019.2893572.
author of 1 books (+3 Czech textbooks)
and more than 125 published scientific and technical papers: 60 of them in WOS.
More then 200 SCI heterocitations,
H-index: WOS: 9
ORCID ID: orcid.org/0000-0003-1333-087X