We are a research group of the Department of Microelectronics focused on the study of new semiconductor structures, their design, characterization and application. At present, we focus mainly on the study of semiconductor nanostructures, quantum coupled structures, the development of new technologies for power electronics and the application of selected semiconductor components.
Research Activities
- Wide-Bandgap Semiconductor Power Electronics (diamond, silicon carbide)
- Radiation Hardness of Semiconductor Devices
- Organic Gas Sensors
- Nanodiamond and ZnO Gas Sensors
- Simulation of Electronic Transport in Nanostructures
Projects
- Hazdra, P.: Essential Elements of Diamond Power Electronics (20–22, GA 20-1140S)
- Hazdra, P.: Printed Heterogeneous Gas Sensor Arrays with Enhanced Sensitivity and Selectivity (22–24, GA 22-04533S)
- Hazdra, P.: Silicon Carbide Power Electronics Technology for Energy Efficient Devices (14–17, OK7X NMP3-LA-2013-604057)
Recent Publications
- Mortet, V.; Taylor, A.; Lambert, N.; Jiránek, J.; Fekete, L.; Klimša, L.; Šimek, D.; Lambert, N.; Sedláková, S.; Kopeček, J.; Hazdra, P., Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth, Diamond and Related Materials, 122 (2022) 108887.
- Hazdra, P.; Laposa, A.; Šobáň, Z.; Voves, J.; Lambert, N.; Davydova, M.; Povolný, V.; Taylor, A. et al., Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
Diamond and Related Materials, 121 (2022) 108797. - Kroutil, J.; Laposa, A.; Ahmad, A.; Voves, J.; Povolný, V.; et al., A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification, Beilstein J. Nano. 13 (2022) 411.
- Mortet, V.; Taylor, A.; Lambert, N.; Gedeonová, Z.; Fekete, L.; Lorinčík, J.; Klimša, L.; Kopeček, J.; P. Hubík, Z. Šobáň, A.Laposa, M. Davydova; Voves, J.; Pošta, A.; Povolný, V.; Hazdra, P., Properties of boron-doped (113) oriented homoepitaxial diamond layers, Diamond and Related Materials, 111 (2021) 108223.
- Vobecký J., Impact of Defect Engineering on High-Power Devices, physica stat. solidi (a), 218 (2021), 2100169.
- Hazdra, P.; Smrkovský, P.; Vobecký, J.; Mihaila, A., Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes, IEEE Transactions on Electron Devices, 68 (2021) 202.
Contact:
Head of the research group: Pavel Hazdra
Group Members:
P. Hazdra, J. Vobecký, J. Voves, V. Záhlava, Šustková, H., A. Pošta, V. Povolný, A., R. Dadashov, A. Ahmad, P. Smrkovský.
Responsible person: Pavel Hazdra