SILICON CARBIDE POWER ELECTRONICS TECHNOLOGY FOR ENERGY EFFICIENT DEVICES
European Commission Project #: 604057
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6.10.2015
Optimization of 1.7 kV SiC JBS diode design presented at ICSCRM 2015
poster
5.10.2015
The effect of electron irradiation on SiC power MOSFET presented at ICSCRM 2015
poster
27.9.2015
The effect of radiation on SiC power devices presented at GADEST 2015
27.6.2015
The effect of ion irradiation on SiC power JBS diode presented at MIXDES 2015
1.6.2015
Simulation model of electron irradiated SiC JBS diode published in IEEE Transaction on Electron Devices
1.4.2015
The effect of proton irradiation on SiC JBS diode published in IEEE Transaction on Nucelar Science
14.12.2014
Simulation model of neutron irradiated high-voltage vertical SiC JFET published in IEEE Transaction on Nuclear Science
23.9.2014
The effect of neutron irradiation on SiC power devices presented at ECSCRM 2014
poster
10.4.2014
Simulation model of proton irradiated SiC Schottky diode published in Solid-State Electronics