Publications

Publications Dedicated to the Project

P. Hazdra, S. Popelka, V. Záhlava, The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices, Materials Science Forum Vols 821-823, 2015, pp. 785-788. poster
R.K.Sharma, P. Hazdra, S.Popelka, Simulation and Characterization of Ion Irradiated 4H-SiC JBS Diode, Proceedings of the 22nd International Conference "Mixed Design of Integrated Circuits and Systems" MIXDES 2015, June 25-27, 2015, Torun, Poland, pp. 567-570.
S. Popelka, P. Hazdra, Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics, Proceedings of the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Giardini Naxos, Italy, October 4 - 9, 2015, accepted to Materials Science Forum. poster
R. K. Sharma, P. Hazdra, S. Popelka, A. Mihaila and H. Bartolf, Optimization of 1700V 4H-SiC JBS Diode Parameters, Proceedings of the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Giardini Naxos, Italy, October 4 - 9, 2015, accepted to Materials Science Forum poster
P. Hazdra, S. Popelka, V. Záhlava, J. Vobecký, Radiation Damage in 4H-SiC and Its Effect on Power Device Characteristics, Solid State Phenomena Vol. 242 (2016) pp 421-426.

S. Popelka, P. Hazdra, R.K. Sharma, V. Záhlava, J. Vobecký, Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling, IEEE Transactions on Nuclear Science, 61 (2014) pp. 3030-3036.
J. Vobecký, P. Hazdra, V. Záhlava, A. Mihaila, M. Berthou, ON-state characteristics of proton irradiated 4H-SiC Schottky diode: The calibration of model parameters for device simulation, Solid-State Electronics 94, 2014, pp. 32-38.
R.K. Sharma, P. Hazdra, S. Popelka, The Effect of Light Ion Irradiation on 4H-SiC MPS Power Diode Characteristics: Experiment and Simulation, IEEE Transactions on Nuclear Science, 62 (2015) pp. 534 - 541.
J. Vobecký, P. Hazdra, S. Popelka, R.K. Sharma, Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode, IEEE Transactions on Electron Devices, 62 (2015) pp. 1964 – 1969.