Pavel Hazdra
prof. Ing., CSc.
Phone: +420-22435 2052
Fax: +420-22431 0792
E-mail: hazdra(at)fel.cvut.cz
Head of Department
Curriculum Vitae
Teaching
Supervising and Lectures
A2B34ELPA – Electronic Devices
B2M34NSV – VLSI System Design
B2M34VKEA – Power Electronics
A8B34EOD – Electronic and Optoelectronic devices
XP34SDS – Semiconductor Structures
Research Activities
Head of the Electron Device Group
- Diamond Electronics
- Silicon Carbide Power Electronics
- Defects inm Semiconductors, Characterization and Application
- Quantum Semiconductor Devices and their Characterization
- Programmable Devices
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Principal Investigator (co-investigator) of Research Projects
- Printed heterogeneous gas sensor arrays with enhanced sensitivity and selectivity (CSF GA 22-04533S), 2022-2024
- Essential elements of diamond power electronics (CSF GA 20-1140S), 2020-2022
- Silicon Carbide Power Technology for Energy Efficient Devices (7. FP EU 604057), 2014-2017
- Defects in wide-bandgap semiconductors and their effect on power and high-temperature electronics (CSF GA P102/12/2108), 2012-2014
- Impact of Capping Layers on Electronic States in Quantum Dots (CSF GA202/09/0676), 2009-2011
- Engineering of Quantum Dots (CSF 202/06/0718), 2006-2008
- Mechanism of Radiative Recombination in Subnanometer InAs/GaAs Laser Structures (GAAV IAA10103180), 2002-2005
Open Positions
1 Postdoc position ( 18-month full employment contract) sponsored by Marie Curie COFUND_CZ project CROP : Topic 12: Wide-Bandgap Electronics for Energy Conversion
Publications
69 SCI (WoS) papers, 2 patents, 781 citations (SCI), h-index: 19 (WoS), 20 (Scopus), 24 (Scholar)
Recent publications
- Hazdra, P.; Laposa, A.; Šobáň, Z.; Alam, M.; Povolný, V.; Mortet, V., Vertical Schottky diode on (113) oriented homoepitaxial diamond, Diamond and Related Materials, 146 (2024) 111180.
- Hazdra, P.; Laposa, A.; Šobáň, Z.; Kroutil, J.; Lambert, N.; Povolný, V.; Taylor, A.; Mortet, V., Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers, physica stat. solidi (a), 220 (2023) 2300508.
- Hazdra, P.; Laposa, A.; Šobáň, Z.; Taylor, A.; Lambert, N.; Povolný, V.; Kroutil, J.; Gedeonová, Z.; Hubík,P.; Mortet, V., Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers, Diamond and Related Materials, 126 (2022) 109088.
- Mortet, V.; Taylor, A.; Lambert, N.; Jiránek, J.; Fekete, L.; Klimša, L.; Šimek, D.; Lambert, N.; Sedláková, S.; Kopeček, J.; Hazdra, P., Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth, Diamond and Related Materials, 122 (2022) 108887.
- Hazdra, P.; Laposa, A.; Šobáň, Z.; Voves, J.; Lambert, N.; Davydova, M.; Povolný, V.; Taylor, A. et al., Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
Diamond and Related Materials, 121 (2022) 108797. - Mortet, V.; Taylor, A.; Lambert, N.; Gedeonová, Z.; Fekete, L.; Lorinčík, J.; Klimša, L.; Kopeček, J.; P. Hubík, Z. Šobáň, A.Laposa, M. Davydova; Voves, J.; Pošta, A.; Povolný, V.; Hazdra, P., Properties of boron-doped (113) oriented homoepitaxial diamond layers, Diamond and Related Materials, 111 (2021) 108223.
- Hazdra, P.; Smrkovský, P.; Vobecký, J.; Mihaila, A., Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes, IEEE Transactions on Electron Devices, 68 (2021) 202.
- Hazdra, P.; Smrkovský, P.; Popelka, S., Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices, physica stat. solidi (a), 218 (2021), 2100218.
- Hazdra, P., Popelka, S., Displacement damage and total ionisation dose effects on 4H-SiC power devices, IET Power Electronics, 12 (2019) 3910.
- Hazdra, P., Vobecký, J., Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV, physica stat. solidi (a), 216 (2019) 1900312.
- Hazdra, P., Popelka, S., Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation, IEEE Transactions on Electron Devices, 65 (2018) 4483.
- Hazdra, P.; Popelka, S.,Radiation resistance of wide-bandgap semiconductor power transistiors, physica stat. solidi (a), 214 (2017) 1600447.
- Popelka, S.; Hazdra, P.; Záhlava, V., Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment, Microelectronics Reliability, 74 (2017) 58.
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Publication list
Awards
- Medal of the Czech Ministery of Education, Youth and Sports, 2nd Grade (2003)
- European Materials Society (E-MRS) Award for the best poster presentation during E-MRS Spring Meeting 2007 Symposium B “Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications” (2007)
- The Certificate of Appreciation, The Institute of Electrical and Electronic Engineers (IEEE) (2007)
- European Materials Society (E-MRS) Award for the best poster presentation during E-MRS Spring Meeting 2006 Symposium U “Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion” (2006)
- Chairman of “The Chapter of the Year 2005” of The IEEE Region 8 (2005)
- The Acknowledgement of The MTT Society of The IEEE (2004)
- MOTOROLA Award for contribution in microcontroller characterization (1998)
- CEI/Elsevier Award for the best poster presented on the conference Ion Implantation Technology (1990)