SILICON CARBIDE POWER ELECTRONICS TECHNOLOGY FOR ENERGY EFFICIENT DEVICES

European Commission Project #: 604057

6.10.2015    Optimization of 1.7 kV SiC JBS diode design presented at ICSCRM 2015 poster

5.10.2015    The effect of electron irradiation on SiC power MOSFET presented at ICSCRM 2015 poster

27.9.2015    The effect of radiation on SiC power devices presented at GADEST 2015

27.6.2015    The effect of ion irradiation on SiC power JBS diode presented at MIXDES 2015

1.6.2015    Simulation model of electron irradiated SiC JBS diode published in IEEE Transaction on Electron Devices

1.4.2015    The effect of proton irradiation on SiC JBS diode published in IEEE Transaction on Nucelar Science

14.12.2014    Simulation model of neutron irradiated high-voltage vertical  SiC JFET published in IEEE Transaction on Nuclear Science

23.9.2014    The effect of neutron irradiation on SiC power devices presented at ECSCRM 2014 poster

10.4.2014    Simulation model of proton irradiated  SiC Schottky diode published in Solid-State Electronics