Pavel Hazdra

prof. Ing., CSc.

Phone: +420-22435 2052

Fax: +420-22431 0792

Head of Department

Curriculum Vitae

Teaching

Supervising and Lectures

A2B34ELPA – Electronic Devices
B2M34NSV – VLSI System Design
B2M34VKEA – Power Electronics
A8B34EOD – Electronic and Optoelectronic devices
XP34SDS – Semiconductor Structures

Research Activities

Head of the Electron Device Group

Diamond Electronics
Silicon Carbide Power Electronics
Defects inm Semiconductors, Characterization and Application
Quantum Semiconductor Devices and their Characterization
Programmable Devices

Principal Investigator (co-investigator) of Research Projects

Printed heterogeneous gas sensor arrays with enhanced sensitivity and selectivity (CSF GA 22-04533S), 2022-2024
Essential elements of diamond power electronics (CSF GA 20-1140S), 2020-2022
Silicon Carbide Power Technology for Energy Efficient Devices (7. FP EU 604057), 2014-2017
Defects in wide-bandgap semiconductors and their effect on power and high-temperature electronics (CSF GA P102/12/2108), 2012-2014
Impact of Capping Layers on Electronic States in Quantum Dots (CSF GA202/09/0676), 2009-2011
Engineering of Quantum Dots (CSF 202/06/0718), 2006-2008
Mechanism of Radiative Recombination in Subnanometer InAs/GaAs Laser Structures (GAAV IAA10103180), 2002-2005

Open Positions

not currently open

Publications

69 SCI (WoS) papers, 2 patents, 838 citations (SCI), h-index: 20 (WoS), 21 (Scopus), 26 (Scholar)

Recent publications

Hazdra, P.; Laposa, A.; Šobáň, Z.; Alam, M.; Povolný, V.; Mortet, V., Vertical Schottky diode on (113) oriented homoepitaxial diamond, Diamond and Related Materials, 146 (2024) 111180.
Hazdra, P.; Laposa, A.; Šobáň, Z.; Kroutil, J.; Lambert, N.; Povolný, V.; Taylor, A.; Mortet, V., Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers, physica stat. solidi (a), 220 (2023) 2300508.
Hazdra, P.; Laposa, A.; Šobáň, Z.; Taylor, A.; Lambert, N.; Povolný, V.; Kroutil, J.; Gedeonová, Z.; Hubík,P.; Mortet, V., Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers, Diamond and Related Materials, 126 (2022) 109088.
Mortet, V.; Taylor, A.; Lambert, N.; Jiránek, J.; Fekete, L.; Klimša, L.; Šimek, D.; Lambert, N.; Sedláková, S.; Kopeček, J.; Hazdra, P., Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth, Diamond and Related Materials, 122 (2022) 108887.
Hazdra, P.; Laposa, A.; Šobáň, Z.; Voves, J.; Lambert, N.; Davydova, M.; Povolný, V.; Taylor, A. et al., Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
Diamond and Related Materials, 121 (2022) 108797.
Mortet, V.; Taylor, A.; Lambert, N.; Gedeonová, Z.; Fekete, L.; Lorinčík, J.; Klimša, L.; Kopeček, J.; P. Hubík, Z. Šobáň, A.Laposa, M. Davydova; Voves, J.; Pošta, A.; Povolný, V.; Hazdra, P., Properties of boron-doped (113) oriented homoepitaxial diamond layers, Diamond and Related Materials, 111 (2021) 108223.
Hazdra, P.; Smrkovský, P.; Vobecký, J.; Mihaila, A., Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes, IEEE Transactions on Electron Devices, 68 (2021) 202.
Hazdra, P.; Smrkovský, P.; Popelka, S., Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices, physica stat. solidi (a), 218 (2021), 2100218.
Hazdra, P., Popelka, S., Displacement damage and total ionisation dose effects on 4H-SiC power devices, IET Power Electronics, 12 (2019) 3910.
Hazdra, P., Vobecký, J., Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV, physica stat. solidi (a), 216 (2019) 1900312.
Hazdra, P., Popelka, S., Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation, IEEE Transactions on Electron Devices, 65 (2018) 4483.
Hazdra, P.; Popelka, S.,Radiation resistance of wide-bandgap semiconductor power transistiors, physica stat. solidi (a), 214 (2017) 1600447.
Popelka, S.; Hazdra, P.; Záhlava, V., Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment, Microelectronics Reliability, 74 (2017) 58.

Publication list

Awards

Medal of the Czech Ministery of Education, Youth and Sports, 2nd Grade (2003)
European Materials Society (E-MRS) Award for the best poster presentation during E-MRS Spring Meeting 2007 Symposium B “Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications” (2007)
The Certificate of Appreciation, The Institute of Electrical and Electronic Engineers (IEEE) (2007)
European Materials Society (E-MRS) Award for the best poster presentation during E-MRS Spring Meeting 2006 Symposium U “Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion” (2006)
Chairman of “The Chapter of the Year 2005” of The IEEE Region 8 (2005)
The Acknowledgement of The MTT Society of The IEEE (2004)
MOTOROLA Award for contribution in microcontroller characterization (1998)
CEI/Elsevier Award for the best poster presented on the conference Ion Implantation Technology (1990)

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